TH58NVG5S0FTAK0 Datasheet, E2PROM, Toshiba Semiconductor

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TH58NVG5S0FTAK0 Features and benefits

* Organization x8 Memory cell array 4328 × 256K × 8 × 4 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes
* Modes Read, Reset, Auto.

TH58NVG5S0FTAK0 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

TH58NVG5S0FTAK0 Description

The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks. The device has two 4328-byte static registers which a.

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